MJD32C discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for use in general purpose amplifier and switching applications. pinning 1 = base 2 = collector 3 = emitter characteristic symbol rating unit collector-base voltage vcbo -100 v collector-emitter voltage vceo -100 v emitter-base voltage vebo -5 v collector current ic -3 a total power dissipation(t c=25oc) pd 15 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -100 - - v ic=-1ma, ie=0 collector-emitter breakdown voltage bvceo -100 - - v ic=-30ma, ib=0 collector cutoff current ices - - -20 ma vce =-100v, vbe=0 iceo - - -50 ma vce =-60v, ib=0 emitter cutoff current iebo - - -1 ma veb =-5v, ic=0 collector-emitter saturation voltage (1) vce(sat) - - -1.2 v ic=-3a, ib=-375ma base-emitter on voltage (1) vbe(on) - - -1.8 v ic=-3a, vce=-4v dc current gain(1) hfe1 25 - - - ic=-1a, vce=-4v hfe2 10 - 50 - ic=-3a, vce=-4v transition frequency ft 3 - - mhz ic=-0.5a, vce =-10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% to-252(dpak) .032 (0.80) .268(6.80).252(6.40) .217(5.50).205(5.20) .024(0.60).018(0.45) .022(0.55).018(0.45) .063(1.60).055(1.40) .228(5.80).213(5.40) .110(2.80) .087(2.20) .091 (2.30) typ .035 (0.90) max max .077(1.95).065(1.65) .059(1.50).035(0.90) 1 2 3 2 dimensions in inches and (millimeters)
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